The HybridPACK™ Drive G2 Modules from Infineon Technologies are compact, high-performance power modules designed for traction applications in hybrid and electric vehicles. These modules provide scalable performance, offering both silicon (Si) and silicon carbide (SiC) technologies, allowing for flexibility in terms of chipsets while maintaining the same module size. Originally introduced in 2017 with the silicon EDT2 technology, these modules were optimized for efficiency in real-world driving scenarios. In 2021, Infineon launched the CoolSiC™ version, which featured higher cell density and improved performance. The latest iteration, the HybridPACK Drive G2, was released in 2023, incorporating EDT3 Si IGBT technology and CoolSiC™ G2 MOSFETs, providing ease of integration, enhanced performance, and the ability to support up to 300 kW in both 750V and 1200V configurations.
The HybridPACK Drive G2 Si IGBT version features improved thermal stacks for better heat dissipation, along with optional long AC tabs that enable current sensing. The contact resistance of the AC tabs is reduced, and the tab thickness has been increased to 1.5mm for better durability. A robust pin rivet design ensures high reliability across a wide temperature range. One of the most significant advantages of the SiC-based module is its ability to reduce inverter losses by two-thirds compared to state-of-the-art IGBT solutions, enabling better overall efficiency. The G2 SiC version can handle peak currents up to 900 ARMS, making it suitable for high-performance, scalable inverter platforms, while offering superior gate oxide and cosmic ray reliability.