onsemi has unveiled next-generation EliteSiC M3e MOSFETs that promise to significantly improve energy efficiency in high-power electrification applications by limiting turn-off losses by up to 50 percent. The platform enables reduced conduction and switching losses, with a field-proven planar architecture.
EliteSiC M3e MOSFETs will play a key role in enabling the performance and reliability of next-generation electrical systems at a lower cost per kW, resulting in a significant impact on the adoption and effectiveness of electrification initiatives. With the ability to operate at higher switching frequencies and voltages while minimizing power conversion losses, this platform is essential for a wide range of automotive and industrial applications, such as electric vehicle powertrains, DC fast chargers, solar inverters, and energy storage solutions.
“The future of electrification depends on advanced power semiconductors. In fact, today’s infrastructure, without significant innovations in power, cannot keep up with the worldwide demand for smarter, electric mobility. This is critical to the ability to achieve global electrification and halt climate change,” said Simon Keeton, Group President, Power Solutions Group at onsemi.
